Boron-doped nanocrystalline silicon thin films for solar cells

Nanocrystalline silicon thin films on PEN substrates

We study the structural and electrical properties of intrinsic layers growth close to the transition between amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) deposited on glass and PEN without intentional heating. These samples showed different behaviour in Raman shift and XRD spectra when compared with that of samples deposited at 200oC. Electrical properties of these films als...

Electronic and optical properties of boron-doped nanocrystalline diamond films

W. Gajewski,1 P. Achatz,2,3 O. A. Williams,4 K. Haenen,4 E. Bustarret,2 M. Stutzmann,1 and J. A. Garrido1 1Walter Schottky Institut, TU München, Am Coulombwall 3, 85748 Garching, Germany 2Institut Néel, CNRS, Université Joseph Fourier, BP 166, 38042 Grenoble, France 3INAC, SPSMS, LaTEQS, CEA, F-38054 Grenoble Cedex 9, France 4Institute for Materials Research (IMO), Hasselt University, Belgium a...

Negative magnetoresistance in boron-doped nanocrystalline diamond films

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Nanocrystalline-graphene-tailored hexagonal boron nitride thin films.

Unintentionally formed nanocrystalline graphene (nc-G) can act as a useful seed for the large-area synthesis of a hexagonal boron nitride (h-BN) thin film with an atomically flat surface that is comparable to that of exfoliated single-crystal h-BN. A wafer-scale dielectric h-BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc-G, which prevented structural ...

Conduction mechanisms in doped mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films